Current DRAM chips belong to the ’10-nm class’ (denoted as D1x, D1y, D1z, D1a…), where the half pitches of the active area in the memory cell array range from 19 nm down to 10 nm. However, the ...

The DRAM itself is based on a one-transistor, one-capacitor (1T1C) cell structure. The cells are arranged in a rectangular, grid-like array. In simple terms, a voltage is applied to the transistor in ...

Sandisk has positioned 3D Matrix Memory as an affordable solution in response to the end of Moore’s Law for DRAM ... on a dense array architecture featuring a novel memory cell design while ...

DRAM is the type of RAM you find on the RAM cards inserted into your motherboard. It consists of a massive array of capacitors and transistors. Each bit requires one transistor and one capacitor ...

NEO Semiconductor’s 3D X-DRAM™ is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today’s mature 3D NAND-like process.

CXMT's G4 DDR5 reduces DRAM cell size by 20% compared to G3 (18nm). For context, Samsung and SK Hynix introduced 16nm DRAM (1y node) in 2016. Process advancement narrows technology gap CXMT has ...

Kaminario is a developer of an all solid-state Flash and DRAM SAN storage solution ... DataProtect provides the Kaminario K2 arrays such data protection features as striping and mirroring of ...